杜佳辰,徐洪涛,韩庆奇,崔国民.数值模拟技术预测自膨式人工瓣膜支架治疗0型二叶主动脉瓣狭窄效果[J].中国医学影像技术,2025,41(1):133~137
数值模拟技术预测自膨式人工瓣膜支架治疗0型二叶主动脉瓣狭窄效果
Numerical simulation technique for predicting effect of self-expanding prosthetic valve stents for treating type 0 bicuspid aortic valve stenosis
投稿时间:2024-08-21  修订日期:2024-09-30
DOI:10.13929/j.issn.1003-3289.2025.01.028
中文关键词:  二叶主动脉瓣  有限元分析  支架
英文关键词:bicuspid aortic valve  finite element analysis  stents
基金项目:
作者单位E-mail
杜佳辰 上海理工大学能源与动力工程学院, 上海 200093  
徐洪涛 上海理工大学能源与动力工程学院, 上海 200093  
韩庆奇 海军军医大学第一附属医院(上海长海医院)心血管外科, 上海 200433 hangsheng520@163.com 
崔国民 上海理工大学能源与动力工程学院, 上海 200093  
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中文摘要:
      [JZ)][摘 要]目的 观察数值模拟技术预测不同植入策略下自膨式人工瓣膜(SEV)支架治疗0型二叶主动脉瓣(BAV)狭窄的效果。方法 基于1例0型BAV狭窄伴不对称钙化患者CT血管成像数据重建主动脉根部管壁、主动脉瓣钙化、原生瓣膜及SEV三维模型,采用ABAQUS/Explicit显式动力学分析模块观察不同植入策略下[植入深度(高、中、低位)+植入中心(中心、偏心位)]SEV与主动脉根部间的相互作用,即根部应力及支架形变。结果 低位、中心位植入时,SEV支架对主动脉根部管壁的范式等效(Von Mises)应力最大,平均值及最大值分别为2.28及45.30 kPa;中位、中心位植入时,S1~S12平面支架椭圆率平均值最高(0.254);高位、偏心位植入时,S1~S3平面支架椭圆率平均值最小(0.124)。结论 不同SEV支架植入策略下支架与主动脉根部的相互作用存在一定差异;采用数值模拟技术根据0型BAV钙化大小及位置确定SEV植入中心及植入深度有助于降低主动脉瓣环破裂风险、提高支架耐用性及改善预后。
英文摘要:
      Objective To observe the effect of numerical simulation technique for predicting effect of self-expanding prosthetic valve (SEV) stents for treating type 0 bicuspid aortic valve (BAV) stenosis with different implantation strategies. Methods Based on CT angiography data from a patient with type 0 BAV stenosis and asymmetric calcification, three-dimensional models of aortic root wall, aortic valve calcification, native valve and SEV were reconstructed. ABAQUS/Explicit dynamic analysis module was used to observe the interaction between SEV stents and aortic root including root stress and stent deformation under different implantation strategies (implantation depths of high, medium or low, and implantation centers of central or eccentric position). Results When SEV was implanted centrally at low depth and central position, the Von Mises stress on aortic root wall was the highest, with mean and peak value of 2.28 and 45.30 kPa, respectively. When SEV was implanted at medium depth and central position, the average eccentricity of stent across all planes was the highest (0.254), while when implanted at high depth and eccentric position, the average ellipticity in planes S1—S3 was the minimal (0.124). Conclusion Different SEV implantation strategies resulted in varying interactions between stent and aortic root. Numerical simulation technique could be used to determine the implantation center and depth based on the size and location of type 0 BAV calcification, which was helpful to reducing rupture risk of aortic annulus, increasing durability and improving prognosis of SEV stent.
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